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FSBF10CH60B Smart Power Module
June 2007
FSBF10CH60B
Smart Power Module
Features
* UL Certified No.E209204(SPM27-JA package) * 600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection * Easy PCB layout due to built in bootstrap diode * Divided negative dc-link terminals for inverter current sensing applications * Single-grounded power supply due to built-in HVIC * Isolation rating of 2500Vrms/min.
Motion-SPM
General Description
TM
Applications
* AC 100V ~ 253V three-phase inverter drive for small power ac motor drives * Home appliances applications like air conditioner and washing machine
It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and short-circuit protection. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals.
Top View
Bottom View
44mm
26.8mm
Figure 1.
(c)2007 Fairchild Semiconductor Corporation
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Integrated Power Functions
* 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
* For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 12 and 13. * For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection * Fault signaling: Corresponding to UV (Low-side supply) and SC faults * Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
Figure 2.
2 FSBF10CH60B Rev. C
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FSBF10CH60B Smart Power Module
Pin Descriptions
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pin Name
VCC(L) COM IN(UL) IN(VL) IN(WL) VFO CFOD CSC IN(UH) VCC(H) VB(U) VS(U) IN(VH) VCC(H) VB(V) VS(V) IN(WH) VCC(H) VB(W) VS(W) NU NV NW U V W P Common Supply Ground Signal Input for Low-side U Phase Signal Input for Low-side V Phase Signal Input for Low-side W Phase Fault Output
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Input Signal Input for High-side U Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for U Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving Signal Input for High-side V Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving Signal Input for High-side W Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for W Phase IGBT Driving Negative DC-Link Input for U Phase Negative DC-Link Input for V Phase Negative DC-Link Input for W Phase Output for U Phase Output for V Phase Output for W Phase Positive DC-Link Input
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FSBF10CH60B Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) VB(W) (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (14) VCC(H) (13) IN(VH) (16) VS(V) (11) VB(U) (10) VCC(H) (9) IN(UH) (12) VS(U)
VB VCC COM IN OUT VS
W (26)
VB VCC COM IN OUT VS
V (25)
VB VCC COM IN OUT VS
U (24)
(8) CSC (7) CFOD (6) VFO
C(SC) OUT(WL) C(FOD) VFO IN(WL) OUT(VL) IN(VL) IN(UL) COM OUT(UL) VSL
NU (21) NV (22) NW (23)
(5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L)
VCC
Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
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FSBF10CH60B Smart Power Module
Absolute Maximum Ratings (TJ = 25C,
Inverter Part Symbol
VPN VPN(Surge) VCES IC ICP PC TJ
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature TC = 25C
Conditions
Applied between P- NU, NV, NW Applied between P- NU, NV, NW
Rating
450 500 600 10 20 22 -40 ~ 150
Units
V V V A A W C
TC = 25C, Under 1ms Pulse Width TC = 25C per One Chip (Note 1)
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150C(@TC 125C).
Control Part Symbol
VCC VBS VIN VFO IFO VSC
Parameter
Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM
Rating
20 20 -0.3~17 -0.3~VCC+0.3 5 -0.3~VCC+0.3
Units
V V V V mA V
Bootstrap Diode Part Symbol
VRRM IF IFP TJ
Parameter
Maixmum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature TC = 25C
Conditions
Rating
600 0.5 2 -40 ~ 150
Units
V A A C
TC = 25C, Under 1ms Pulse Width
Total System Symbol
VPN(PROT) TC TSTG VISO
Parameter
Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Module Case Operation Temperature Storage Temperature Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5V TJ = 150C, Non-repetitive, less than 2s -40C TJ 150C, See Figure 2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate
Rating
400 -40 ~ 125 -40 ~ 150 2500
Units
V C C Vrms
Thermal Resistance Symbol
Rth(j-c)Q Rth(j-c)F
Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2.
Parameter
Junction to Case Thermal Resistance
Conditions
Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module)
Min.
-
Typ. Max. Units
5.5 6.3 C/W C/W
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FSBF10CH60B Smart Power Module
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Inverter Part Symbol
VCE(SAT) VF HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES
Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4.
Parameter
Collector-Emitter Saturation Voltage FWD Forward Voltage Switching Times
Conditions
VCC = VBS = 15V VIN = 5V VIN = 0V IC = 10A, TJ = 25C IF = 10A, TJ = 25C
Min.
-
Typ.
0.75 0.15 0.60 0.15 0.10 0.50 0.20 0.55 0.15 0.10 -
Max.
2.0 2.1 1
Units
V V s s s s s s s s s s mA
VPN = 300V, VCC = VBS = 15V IC = 10A VIN = 0V 5V, Inductive Load (Note 3)
VPN = 300V, VCC = VBS = 15V IC = 10A VIN = 0V 5V, Inductive Load (Note 3)
-
Collector-Emitter Leakage Current
VCE = VCES
-
Control Part Symbol
IQCCL IQCCH IQBS VFOH VFOL VSC(ref) TSD TSD UVCCD UVCCR UVBSD UVBSR tFOD VIN(ON) VIN(OFF)
Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Parameter
Quiescent VCC Supply Current
Conditions
VCC = 15V IN(UL, VL, WL) = 0V VCC = 15V IN(UH, VH, WH) = 0V VCC(L) - COM VCC(H) - COM VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W)
Min.
4.5 0.45 10.7 11.2 10 10.5 1.0 2.8 -
Typ.
0.5 160 5 11.9 12.4 11 11.5 1.8 -
Max.
23 600 500 0.8 0.55 13.0 13.4 12 12.5 0.8
Units
mA A A V V V C C V V V V ms V V
Quiescent VBS Supply Current Fault Output Voltage
VBS = 15V IN(UH, VH, WH) = 0V
VSC = 0V, VFO Circuit: 4.7k to 5V Pull-up VSC = 1V, VFO Circuit: 4.7k to 5V Pull-up VCC = 15V (Note 4)
Short Circuit Trip Level Over-temperature tion Over-temperature tion hysterisis Supply Circuit UnderVoltage Protection
protec- Temperature at LVIC protec- Temperature at LVIC Detection Level Reset Level Detection Level Reset Level
Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage
CFOD = 33nF (Note 5) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM
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FSBF10CH60B Smart Power Module
100% I C 100% I C
trr
V CE
IC
IC
V CE
V IN tON tC(ON)
V IN(ON) 10% IC 90% I C 10% V CE
V IN
0
tOFF tC(OFF)
V IN(OFF) 10% V CE 10% I C
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
Switching Loss (Typical)
SWITCHING LOSS(ON) VS. COLLECTOR CURRENT
700
SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
400
600
SWITCHING LOSS, ESW(OFF) [uJ]
SWITCHING LOSS, ESW(ON) [uJ]
500
VCE=300V VCC=15V VIN=5V TJ=25 TJ=150
350 300 250 200 150 100 50 0
VCE=300V VCC=15V VIN=5V TJ=25 TJ=150
400
300
200
100
0 0 1 2 3 4 5 6 7 8 9 10 11
0
1
2
3
4
5
6
7
8
9
10
11
COLLECTOR CURRENT, Ic [AMPERES]
COLLECTOR CURRENT, Ic [AMPERES]
Figure 5. Switching Loss Characteristics
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FSBF10CH60B Smart Power Module
Bootstrap Diode Part Symbol
VF trr
Parameter
Forward Voltage Reverse Recovery Time
Conditions
IF = 0.1A, TC = 25C IF = 0.1A, TC = 25C
Min.
-
Typ.
2.5 80
Max.
-
Units
V ns
1.0 0.9 0.8 0.7 0.6
Built in Bootstrap Diode VF-IF Characteristic
IF [A]
0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12
TC=25
13 14 15
VF [V]
Note:
6. Built in bootstrap diode includes around 15 resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Symbol
VPN VCC VBS dVCC/dt, dVBS/dt tdead fPWM VSEN
Parameter
Supply Voltage Control Supply Voltage High-side Bias Voltage Control supply variation
Conditions
Applied between P - NU, NV, NW Applied between VCC(H), VCC(L)- COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W)
Value Min.
13.5 13.0 -1 1.5 -4
Typ.
300 15 15 -
Max.
400 16.5 18.5 1 20 4
Units
V V V V/s
s
Blanking Time for Preventing For Each Input Signal Arm-short PWM Input Signal Voltage for Current Sensing -40C TC 125C, -40C TJ 150C Applied between NU, NV, NW - COM (Including surge voltage)
kHz V
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Mechanical Characteristics and Ratings
Parameter
Mounting Torque Device Flatness Weight Mounting Screw: - M3
Conditions
Recommended 0.62N*m Note Figure 7
Limits Min.
0.51 0 -
Typ.
0.62 15.4
Max.
1.00 +120 -
Units
N*m
m
g
(+)
(+)
Figure 7. Flatness Measurement Position
Package Marking and Ordering Information
Device Marking
FSBF10CH60B
Device
FSBF10CH60B
Package
SPM27-JA
Reel Size
-
Tape Width
-
Quantity
10
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Time Charts of SPMs Protective Function
Input Signal Protection Circuit State
UVCCR
RESET
SET
RESET
Control Supply Voltage
a1 UVCCD a2 a4 a3
a6
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-side)
Input Signal Protection Circuit State
UVBSR
RESET
SET
RESET
Control Supply Voltage
b1 UVBSD b2 b3
b5 b6 b4
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current
Figure 9. Under-Voltage Protection (High-side)
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FSBF10CH60B Smart Power Module
Lower arms control input Protection circuit state Internal IGBT Gate-Emitter Voltage
c2
c6
c7
SET
c4 c3
RESET
SC
c1
Output Current
c8
Sensing Voltage of the shunt resistance Fault Output Signal
c5
SC Reference Voltage
CR circuit time constant delay
(with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "L" : IGBT OFF state. c7 : Input "H": IGBT ON state, but during the active period of fault output the IGBT doesn't turn ON. c8 : IGBT OFF state
Figure 10. Short-Circuit Current Protection (Low-side Operation only)
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FSBF10CH60B Smart Power Module
5V-Line
RPF=4.7 100
SPM
IN(UH) , IN(VH) , IN(WH)
CPU
100 100 1nF 1nF 1nF
IN (UL) , IN (VL) , IN(WL) VFO CPF= 1nF
COM
Note:
1) RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application's printed circuit board. The SPM input signal section integrates 5k (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 11. Recommended CPU I/O Interface Circuit
These Values depend on PWM Control Algorithm
One-Leg Diagram of SPM
P
Vcc VB HO
15V-Line
22uF
0.1uF
IN
COM VS
Vcc
Inverter Output
OUT
1000uF
1uF
IN
COM VSL
N
Note:
1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.
Figure 12. Recommended Bootstrap Operation Circuit and Parameters
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
5V line 15V line
(19) V B(W ) (18) V CC(H)
P (27)
VB VCC COM IN OUT VS
W (26)
RS Gating W H C PS
C BS
C BSC
(17) IN (W H) (20) V S(W ) (15) V B(V) (14) V CC(H)
VB VCC COM IN OUT VS
V (25)
RS Gating VH C PS
C BS
C BSC
(13) IN (VH) (16) V S(V) (11) V B(U) (10) V CC(H)
M
C DCS Vdc
C P U
VB VCC COM IN OUT VS
U (24)
RS Gating UH C PS RF R PF
C BS
C BSC
(9) IN (UH) (12) V S(U)
C SC RS Fault RS Gating W L Gating VL Gating UL RS RS C BPF C PF C FOD
(8) C SC (7) C FOD (6) V FO
C(SC) OUT(W L) C(FOD) VFO IN(W L) OUT(VL) IN(VL) IN(UL) COM OUT(UL) V SL
N U (21) N V (22) N W (23)
R SW
(5) IN (W L) (4) IN (VL) (3) IN (UL) (2) COM
R SV
C PS C C PS PS
(1) V CC(L)
VCC
R SU
C SP15
C SPC15
Input Signal for Short-Circuit Protection
W-Phase Current V-Phase Current U-Phase Current
C FW C FV C FU
R FW R FV R FU
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7k resistance. Please refer to Figure11. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6) Input signal is High-Active type. There is a 5k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100 , CPS=1nF) 7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2s. 9) Each capacitor should be mounted as close to the pins of the SPM as possible. 10) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22F between the P&GND pins is recommended. 11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12) CSPC15 should be over 1F and mounted as close to the pins of the SPM as possible.
Figure 13. Typical Application Circuit
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Detailed Package Outline Drawings
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Detailed Package Outline Drawings (Continued)
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FSBF10CH60B Rev. C
FSBF10CH60B Smart Power Module
Detailed Package Outline Drawings (Continued)
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FSBF10CH60B Rev. C
TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM (R) EcoSPARK FACT Quiet SeriesTM (R) FACT (R) FAST FastvCoreTM FPSTM (R) FRFET SM Global Power Resource Green FPSTM
(R)
Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM (R) OPTOLOGIC (R) OPTOPLANAR PDP-SPMTM (R) Power220 (R) Power247
POWEREDGE Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
(R)
SuperSOTTM-8 SyncFETTM (R) The Power Franchise
TM
TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM (R) UHC UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I29
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
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